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Obsolete Device

TCM680

+5V To ±10V Voltage Converter

Features

•99% Voltage Conversion Efficiency•85% Power Conversion Efficiency•Input Voltage Range:-+2.0V to +5.5V

•Only 4 External Capacitors Required•8-Pin SOIC Package

General Description

The TCM680 is a dual charge pump, voltage converterthat produces output voltages of +2VIN and -2VIN froma single input voltage of +2.0V to +5.5V. Commonapplications include ±10V from a single +5V logicsupply and ±6V from a +3V lithium battery.

The TCM680 is packaged in 8-pin SOIC and PDIPpackages and requires only four inexpensive, externalcapacitors. The charge pumps are clocked by an on-board 8kHz oscillator. Low output source impedances(typically 140Ω) provide maximum output currents of10mA for each output. Typical power conversion effi-ciency is 85%.

High efficiency, small size and low cost make theTCM680 suitable for a wide variety of applications thatneed both positive and negative power suppliesderived from a single input voltage.

Applications

•••••••

±10V From +5V Logic Supply±6V From a 3V Lithium CellHandheld InstrumentsPortable Cellular PhonesLCD Display Bias GeneratorPanel Meters

Operational Amplifier Power Supplies

Package Type

PDIP

Typical Operating Circuit

+5VC1+4.7µF

C1+C1-C2+C2-VOUT-GND

VOUT- = -(2 x VIN)

C3 +4.7µF

VIN

VOUT+

C4

+4.7µF

VOUT+ = (2 x VIN)

C1-C2+C2-VOUT-

12

8VOUT+

7C1+

TCM680CPA

3TCM680EPA6VIN4

5GND

TCM680

C2 +

4.7µF

SOIC

GND

C1-C2+C2-VOUT-12

8VOUT+

GND

7C1+

TCM680COA

3TCM680EOA6VIN4

5GND

© 2005 Microchip Technology Inc.DS21486C-page 1

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TCM680

1.0

ELECTRICAL

CHARACTERISTICS

† Notice: Stresses above those listed under \"MaximumRatings\" may cause permanent damage to the device.This is a stress rating only and functional operation ofthe device at those or any other conditions above thoseindicated in the operation listings of this specification isnot implied. Exposure to maximum rating conditions forextended periods may affect device reliability

Absolute Maximum Ratings†

VIN.......................................................................+5.8VVOUT+................................................................+11.6VVOUT–.................................................................-11.6VVOUT+ Short-Circuit Duration......................ContinuousVOUT+ Current....................................................75mAVIN dV/dT.......................................................1V/µsecPower Dissipation (TA ≤ 70°C)

8-Pin PDIP..............................................730mW 8-Pin SOIC..............................................470mWOperating Temperature Range.............-40°C to +85°CStorage Temperature Range..............-65°C to +150°CMaximum Junction Temperature......................+150°C

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, VIN = +5V, TA = +25°C, refer to Figure1-1.

Parameters

Supply Voltage RangeSupply Current

SymVINIIN

Min2.0————

Negative Charge Pump OutputSource Resistance

ROUT-—————

Positive Charge Pump OutputSource Resistance

ROUT+————

Oscillator FrequencyPower Efficiency

Voltage Conversion Efficiency

FOSCPEFFVOUTEFF

——9797

Typ—0.51.0——140180———140180———21859999

Max5.51.02.02.53.0180250220250—180250220250—————

kHz%%

RL = 2kΩVOUT+, RL = ∞VOUT–, RL = ∞ΩΩUnitsVmA

Conditions

-40°C ≤ TA ≤ +85°C, RL = 2kΩVIN = 3V, RL = ∞VIN = 5V, RL = ∞

VIN = 5V, 0°C ≤ TA ≤ +70°C, RL = ∞VIN = 5V, -40°C ≤ TA ≤ +85°C, RL = ∞IL– = 10mA, IL+ = 0mA, VIN = 5VIL– = 5mA, IL+ = 0mA, VIN = 2.8V0°C ≤ TA ≤ + 70°C-40°C ≤ TA ≤ + 85°C

IL– = 10mA, IL+ = 0mA, VIN = 5VIL+= 10mA, IL– = 0mA, VIN = 5VIL+= 5mA, IL– = 0mA, VIN = 2.8V0°C ≤ TA ≤ + 70°C-40°C ≤ TA ≤ + 85°C

IL+ = 10mA, IL– = 0mA, VIN = 5V

DS21486C-page 2© 2005 Microchip Technology Inc.

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TCM680

VINC1

+

4.7µF

1C-12C+

2

4.7µF

3C-24

VOUT+8C1+7VIN6

5

+

C310µF

RL-VOUT-GND

+

C410µF

VOUT+

C2

+

TCM680

RL+

VOUT-

GND

FIGURE 1-1:Test Circuit Used For DC Characteristics Table.

© 2005 Microchip Technology Inc.DS21486C-page 3

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TCM680

2.0

Note:

TYPICAL PERFORMANCE CURVES

The graphs and tables provided following this note are a statistical summary based on a limited number ofsamples and are provided for informational purposes only. The performance characteristics listed hereinare not tested or guaranteed. In some graphs or tables, the data presented may be outside the specifiedoperating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated, VIN = +5V, TA = +25°C.

30010.0C1 = C4 = 10 μFOutput Resistance (Ω)250VOUT (V)9.02008.0150ROUT100123VIN (V)4567.00510Load Current (mA)15FIGURE 2-1:

Output Resistance vs. VIN.

FIGURE 2-4:Current.

10.0VOUT+ or VOUT- vs. Load

1.41.2Supply Current (mA)1.00.80.60.40.2VOUT (V)9.0RL = ∞8.0123VIN (V)4567.00246810Output Current (mA) From VOUT+ To VOUT–FIGURE 2-2:

Supply Current vs. VIN.

FIGURE 2-5:Current.

Output Voltage vs. Output

180Output Source Resistance (Ω)IOUT = 10 mA 160ROUT140120100-50050Temperature (˚C)100FIGURE 2-3:vs. Temperature.

Output Source Resistance

DS21486C-page 4© 2005 Microchip Technology Inc.

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TCM680

3.0

PIN DESCRIPTION

3.4

Negative Output Voltage (VOUT-)

The descriptions of the pins are listed in Table3-1.

Negative connection for the negative charge pump out-put capacitor. The negative charge pump output capac-itor supplies the output load during the first, third andfourth phases of the switching cycle. During the secondphase of the switching cycle, charge is restored to thenegative charge pump output capacitor. The negativeoutput voltage magnitude is approximately twice theinput voltage.

It is recommended that a low ESR (equivalent seriesresistance) capacitor be used. Additionally, largervalues will lower the output ripple.

TABLE 3-1:PIN FUNCTION TABLE

Description

Input. First charge pump capacitor. Negative connection

Input. Second charge pump capacitor. Positive connection.

Input. Second charge pump capacitor. Negative connection.

-Pin No.

(8-Pin PDIP, SymbolSOIC)1

C1-C2+C2-2

3.5Ground (GND)

3

Input zero volt reference.

3.6

4567

VOUT

Output. Negative Output voltage

Input. Ground connection.Input. Power supply.Input. First charge pump capacitor. Positive connection.

Output. Positive Output Voltage.

Power Supply Input (VIN)

GNDVINC1+VOUT+Positive power supply input voltage connection. It isrecommended that a low ESR (equivalent series resis-tance) capacitor be used to bypass the power supplyinput to ground (GND).

3.7

First Charge Pump Capacitor (C1+)

8

3.1

First Charge Pump Capacitor (C1-)

Positive connection for the charge pump capacitor (fly-ing capacitor) used to transfer charge from the inputsource to a second charge pump capacitor. Properorientation is imperative when using a polarizedcapacitor.

Negative connection for the charge pump capacitor(flying capacitor) used to transfer charge from the inputsource to a second charge pump capacitor. Thischarge pump capacitor is used to double the input volt-age and store the charge in the second charge pumpcapacitor.

It is recommended that a low ESR (equivalent seriesresistance) capacitor be used. Additionally, largervalues will lower the output resistance.

3.8

Positive Output Voltage (VOUT+)

Positive connection for the positive charge pump out-put capacitor. The positive charge pump output capac-itor supplies the output load during the first, second andthird phases of the switching cycle. During the fourthphase of the switching cycle, charge is restored to thepositive charge pump output capacitor. The positiveoutput voltage magnitude is approximately twice theinput voltage.

It is recommended that a low ESR (equivalent seriesresistance) capacitor be used. Additionally, largervalues will lower the output ripple.

3.2

Second Charge Pump Capacitor (C2+)

Positive connection for the second charge pumpcapacitor (flying capacitor) used to transfer charge fromthe first charge pump capacitor to the output.

It is recommended that a low ESR (equivalent seriesresistance) capacitor be used. Additionally, largervalues will lower the output resistance.

3.3

Second Charge Pump Capacitor (C2-)

Negative connection for the second charge pumpcapacitor (flying capacitor) used to transfer charge fromthe first charge pump capacitor to the output. Properorientation is imperative when using a polarizedcapacitor.

© 2005 Microchip Technology Inc.DS21486C-page 5

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TCM680

4.0

4.1

DETAILED DESCRIPTION

VOUT- Charge Storage - Phase 1

4.3

VOUT+ Charge Storage - Phase 3

The positive side of capacitors C1 and C2 are con-nected to +5V at the start of this phase. C1+ is thenswitched to ground and the charge in C1– is transferredto C2–. Since C2+ is connected to +5V, the voltagepotential across capacitor C2 is now 10V.

VIN = +5V

– C4+SW1+– C1SW2

-5V

+– SW3C2SW4

– C3+The third phase of the clock is identical to the firstphase – the charge stored in C1 produces -5V in thenegative terminal of C1, which is applied to the negativeside of capacitor C2. Since C2+ is at +5V, the voltagepotential across C2 is 10V.

VIN = +5V

C4+SW1

SW3+– C2SW4

– C3++– VOUT+VOUT-

VOUT

+

C1SW2

-5V

VOUT-

FIGURE 4-3:

Charge Pump - Phase 1.

Charge Pump - Phase 3.

FIGURE 4-1:

4.4

VOUT+ Transfer - Phase 4

4.2

VOUT- Transfer - Phase 2

Phase two of the clock connects the negative terminalof C2 to the VOUT- storage capacitor C3 and the positiveterminal of C2 to ground, transferring the generated-10V to C3. Simultaneously, the positive side of capac-itor C1 is switched to +5V and the negative side isconnected to ground.

+5V

C4+SW1+– C1SW2

-5V

+– SW3C2SW4-10V

– C3+The fourth phase of the clock connects the negativeterminal of C2 to ground and transfers the generated10V across C2 to C4, the VOUT+ storage capacitor.Simultaneously, the positive side of capacitor C1 isswitched to +5V and the negative side is connected toground, and the cycle begins again.

+5V

– C4+SW1+– SW3

+– SW4

-10V

VOUT+VOUT-

VOUT

+

C1SW2

-5V

C2

VOUT-

– C3+FIGURE 4-4:Charge Pump - Phase 4.

FIGURE 4-2:Charge Pump - Phase 2.

DS21486C-page 6© 2005 Microchip Technology Inc.

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TCM680

4.5

Maximum Operating Limits

The maximum input voltage rating must be observed.The TCM680 will clamp the input voltage to 5.8V.Exceeding this maximum threshold will cause exces-sive current to flow through the TCM680, potentiallycausing permanent damage to the device.

4.6

Switched Capacitor Converter Power Losses

The overall power loss of a switched capacitorconverter is affected by four factors:1.

Losses from power consumed by the internaloscillator, switch drive, etc. These losses willvary with input voltage, temperature andoscillator frequency.

Conduction losses in the non-ideal switches.Losses due to the non-ideal nature of theexternal capacitors.

Losses that occur during charge transfer fromthe pump to reservoir capacitors when a voltagedifference between the capacitors exists.

2.3.4.

The power loss for the TCM680 is calculated using thefollowing equation:

EQUATION

PLOSS = (IOUT+)2 X ROUT- + (IOUT-)2 X ROUT+ + IIN X VIN

© 2005 Microchip Technology Inc.DS21486C-page 7

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TCM680

5.0

5.1

APPLICATIONS INFORMATION

Voltage Multiplication and Inversion

The TCM680 performs voltage multiplication and inver-sion simultaneously, providing positive and negativeoutputs (Figure5-1). The magnitude of both outputs is,approximately, twice the input voltage. Unlike otherswitched capacitor converters, the TCM680 requiresonly four external capacitors to provide both functionssimultaneously.

C1+22µF+C222µFROUT is typically 140Ω at +25°C with VIN = +5V and C1and C2 as 4.7µF low ESR capacitors. The fixed term(32RSW) is about 130Ω. It can easily be seen thatincreasing or decreasing values of C1 and C2 will affectefficiency by changing ROUT. However, be carefulabout ESR. This term can quickly become dominantwith large electrolytic capacitors. Table5-1 showsROUT for various values of C1 and C2 (assume 0.5ΩESR). C1 and C4 must be rated at 6VDC or greaterwhile C2 and C3 must be rated at 12VDC or greater.Output voltage ripple is affected by C3 and C4.Typically, the larger the value of C3 and C4, the less theripple for a given load current. The formula forVRIPPLE(p-p) is given below:

1C-122VOUT+8C1+7VIN65+C322µF+C422µFVOUT+2C+3C-4EQUATION

VRIPPLE(p-p)+={1/[2(fPUMP/3)xC4]+2(ESRC4)}(IOUT+)VRIPPLE(p-p)–={1/[2(fPUMP/3)xC3]+2(ESRC3)}(IOUT–)For a 10µF (0.5Ω ESR) capacitor for C3, C4,fPUMP=21kHz and IOUT = 10mA, the peak-to-peakripple voltage at the output will be less than 100mV. Inmost applications (IOUT ≤ 10mA), 10-20µF outputcapacitors and 1-5µF pump capacitors will suffice.Table5-2 shows VRIPPLE for different values of C3 andC4 (assume 1Ω ESR).

TCM680VINGNDVOUT-VOUT-GNDFIGURE 5-1:Converter.

Positive and Negative

5.2Capacitor Selection

The TCM680 requires only 4 external capacitors foroperation, which can be inexpensive, polarized alumi-num electrolytic types. For the circuit in Figure5-1, theoutput characteristics are largely determined by theexternal capacitors. An expression for ROUT can bederived as shown below:

TABLE 5-1:

C1, C2 (µF)

0.10.4713.34.71022100

OUTPUT RESISTANCEVS. C1, C2ROUT+, ROUT- (Ω)

10339232165157146141137

EQUATION

ROUT+=4(RSW1+RSW2+ESRC1+RSW3+RSW4+ESRC2)

+4(RSW1+RSW2+ESRC1+RSW3+RSW4+ESRC2)+1/(fPUMP x C1) + 1/(fPUMP x C2) + ESRC4ROUT–=4(RSW1+RSW2+ESRC1+RSW3+RSW4+ESRC2)

+4(RSW1+RSW2+ESRC1+RSW3+RSW4+ESRC2)+1/(fPUMP x C1) + 1/(fPUMP x C2) + ESRC3

TABLE 5-2:

C3, C4 (µF)

0.4713.34.71022100

VRIPPLE PEAK-TO-PEAKVS. C3, C4 (IOUT 10mA)

VRIPPLE(p-p)+,VRIPPLE(p-p)- (mV)

10734236172915227

Assuming all switch resistances are approximatelyequal:

EQUATION

ROUT = 32RSW + 8ESRC1 + 8ESRC2 + ESRC4

+1/(fPUMP x C1) + 1/(fPUMP x C2)ROUT– = 32RSW + 8ESRC1 + 8ESRC2 + ESRC3

+1/(fPUMP x C1) + 1/(fPUMP x C2)

+

DS21486C-page 8© 2005 Microchip Technology Inc.

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TCM680

5.3

Paralleling Devices

5.4

Output Voltage Regulation

To reduce the value of ROUT- and ROUT+, multipleTCM680 voltage converters can be connected in paral-lel (Figure5-2). The output resistance of both outputswill be reduced, approximately, by a factor of n, wheren is the number of devices connected in parallel.

The outputs of the TCM680 can be regulated to provide+5V from a 3V input source (Figure5-3). The TCM680performs voltage multiplication and inversion produc-ing output voltages of, approximately, +6V. TheTCM680 outputs are regulated to +5V with the linearregulators TC55 and TC59. The TC is a voltagedetector providing an indication that the input source islow and that the outputs may fall out of regulation. Theinput source to the TCM680 can vary from 2.8V to 5.5Vwithout adversely affecting the output regulation mak-ing this application well suited for use with single cellLi-Ion batteries or three alkaline or nickel basedbatteries connected in series.

EQUATION

ROUT- = ROUT- (of TCM680)

n (number of devices)EQUATION

ROUT+ = ROUT+ (of TCM680)

n (number of devices)Each device requires its own pump capacitors, but alldevices may share the same reservoir capacitors. Topreserve ripple performance, the value of the reservoircapacitors should be scaled according to the number ofdevices connected in parallel.

VIN

22µF++10µF

C1+VINC1-VOUT+

+10µF– C1+VINC1-C2+

VOUT+

PositiveSupply

TCM680

+10µF

– C2

+

-C2-GNDVOUT

TCM680

+10µF

VOUT-–

22µF+NegativeSupply

C2-GND

GND

FIGURE 5-2:Paralleling TCM680 for Lower Output Source Resistance.

© 2005 Microchip Technology Inc.DS21486C-page 9

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TCM680

+–+10µF

–+– 3V

+10µF

C2+C2

-

COUT+ 22µF

TC55RP5002EXXVIN

VSS

VOUT

+5 Supply

+–1µF

Ground

+

VSS

–VOUT

1µF

-5 Supply

C1+C1-

VIN

+6V

TCM680

VOUT-GND

-6V

VIN

COUT-22µF

–+

TC595002ECB

TCVC2702ExxVIN

VSS

VOUT

LOW BATTERY

FIGURE 5-3:Split Supply Derived from 3V Battery.

DS21486C-page 10© 2005 Microchip Technology Inc.

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TCM680

6.0

6.1

PACKAGING INFORMATION

Packaging Marking Information

8-Lead PDIP (300 mil)

Example:

XXXXXXXXXXXXXNNNYYWWTCM680CPA12302318-Lead SOIC (150 mil)Example:

XXXXXXXXXXXXYYWWNNNTCM680COA0231123Legend: XX...X

YYWWNNNNote:

Customer specific information*

Year code (last 2 digits of calendar year)Week code (week of January 1 is week ‘01’)Alphanumeric traceability code

In the event the full Microchip part number cannot be marked on one line, it willbe carried over to the next line thus limiting the number of available charactersfor customer specific information.

*Standard OTP marking consists of Microchip part number, year code, week code, and traceability code.

© 2005 Microchip Technology Inc.DS21486C-page 11

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TCM680

8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)

E1

D

2

n

1

α

E

A

A2

c

L

A1

β

eB

B1

p

B

Number of PinsPitch

Top to Seating Plane

Molded Package ThicknessBase to Seating Plane

Shoulder to Shoulder WidthMolded Package WidthOverall Length

Tip to Seating PlaneLead ThicknessUpper Lead WidthLower Lead WidthOverall Row SpacingMold Draft Angle TopMold Draft Angle Bottom* Controlling Parameter§ Significant Characteristic

Units

Dimension Limits

npAA2A1EE1DLcB1BeBαβMIN

INCHES*NOM

8.100.155.130.313.250.373.130.012.058.018.3701010

MAX

§

.140.115.015.300.240.360.125.008.045.014.31055

.170.145.325.260.385.135.015.070.022.4301515

MILLIMETERS

MINNOM

82.

3.563.942.923.300.387.627.946.106.359.149.463.183.300.200.291.141.460.360.467.879.40510510

MAX

4.32

3.688.266.609.783.430.381.780.5610.921515

Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.2mm) per side.JEDEC Equivalent: MS-001Drawing No. C04-018

DS21486C-page 12© 2005 Microchip Technology Inc.

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TCM680

8-Lead Plastic Small Outline (SN) –Narrow, 150 mil (SOIC)

EE1

p

D2

B

n

1

h

45°

α

c

A

A2

φβ

L

A1

Number of PinsPitch

Overall Height

Molded Package ThicknessStandoff§Overall Width

Molded Package WidthOverall LengthChamfer DistanceFoot LengthFoot Angle

Lead ThicknessLead Width

Mold Draft Angle TopMold Draft Angle Bottom* Controlling Parameter§ Significant Characteristic

Units

Dimension Limits

npAA2A1EE1DhLφcBαβMIN

.053.052.004.228.146.1.010.0190.008.01300

INCHES*NOM

8.050.061.056.007.237.1.193.015.02.009.0171212

MAXMIN

.069.061.010.244.157.197.020.0308.010.0201515

MILLIMETERS

NOM

81.27

1.351.551.321.420.100.185.796.023.713.914.804.900.250.380.480.62040.200.230.330.42012012

MAX

1.75

1.550.256.203.995.000.510.7680.250.511515

Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.2mm) per side.JEDEC Equivalent: MS-012Drawing No. C04-057

© 2005 Microchip Technology Inc.DS21486C-page 13

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TCM680

NOTES:

DS21486C-page 14© 2005 Microchip Technology Inc.

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TCM680

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

PART NO.Device

XTemperatureRange

/XXPackage

Examples:a)b)

TCM680: Charge Pump ConverterCE

= 0°C to +70°C= -40°C to +85°C

TCM680COA: Charge Pump Converter,

SOIC pkg, 0°C to +70°C.

Device:

Temperature Range:

TCM680COATR: Charge Pump Converter,

SOIC pkg, 0°C to +70°C, Tape and Reel.

c)d)e)

TCM680CPA: Charge Pump Converter,

PDIP pkg, 0°C to +70°C.

TCM680EOA: Charge Pump Converter,

SOIC pkg, -40°C to +85°C.

TCM680EOATR: Charge Pump Converter,

SOIC pkg, -40°C to +85°C, Tape and Reel.

Package:

PA=Plastic DIP (300 mil Body), 8-leadOA=Plastic SOIC, (150 mil Body), 8-leadOATR=Plastic SOIC, (150 mil Body), 8-lead

(Tape and Reel)

f)TCM680EPA: Charge Pump Converter,

PDIP pkg, -40°C to +85°C.

Sales and SupportData Sheets

Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:1.2.3.

Your local Microchip sales office

The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277The Microchip Worldwide Site (www.microchip.com)

Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.New Customer Notification System

Register on our web site (www.microchip.com/cn) to receive the most current information on our products.

© 2005 Microchip Technology Inc.DS21486C-page15

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TCM680

NOTES:

DS21486C-page 16© 2005 Microchip Technology Inc.

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Note the following details of the code protection feature on Microchip devices:•••

Microchip products meet the specification contained in their particular Microchip Data Sheet.

Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions.

There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

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••

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Information contained in this publication regarding deviceapplications and the like is provided only for your convenienceand may be superseded by updates. It is your responsibility toensure that your application meets with your specifications.MICROCHIP MAKES NO REPRESENTATIONS OR WAR-RANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,WRITTEN OR ORAL, STATUTORY OR OTHERWISE,RELATED TO THE INFORMATION, INCLUDING BUT NOTLIMITED TO ITS CONDITION, QUALITY, PERFORMANCE,MERCHANTABILITY OR FITNESS FOR PURPOSE.Microchip disclaims all liability arising from this information andits use. Use of Microchip’s products as critical components inlife support systems is not authorized except with expresswritten approval by Microchip. No licenses are conveyed,implicitly or otherwise, under any Microchip intellectual propertyrights.

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registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.

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Analog-for-the-Digital Age, Application Maestro, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial

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All other trademarks mentioned herein are property of their respective companies.

© 2005, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved.

Printed on recycled paper.

Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company’s quality system processes and

procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.

© 2005 Microchip Technology Inc.DS21486C-page 17

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