您好,欢迎来到吉趣旅游网。
搜索
您的当前位置:首页MMBT3904LP-7B;中文规格书,Datasheet资料

MMBT3904LP-7B;中文规格书,Datasheet资料

来源:吉趣旅游网


MMBT3904LP 40V NPN SURFACE MOUNT TRANSISTOR

Features

• • • • •

Complementary PNP Type Available (MMBT3906LP) Ultra-Small Leadless Surface Mount Package “Lead Free”, RoHS Compliant (Note 1)

Halogen and Antimony Free \"Green\" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1006-3 • Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208 • Weight: 0.0008 grams (approximate)

CX1-DFN1006-3

BBCETop View Device Schematic

EBottom View

Device Symbol

Ordering Information (Note 3)

Product MMBT3904LP-7 MMBT3904LP-7B

Notes:

Marking Reel size (inches) Tape width (mm) Quantity per reel 1N 7 8mm 3,000 1N 7 8mm 10,000 1. No purposefully added lead.

2. Diodes Inc's \"Green\" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

MMBT3904LP-7 MMBT3904LP-7B

1NTop View Dot Denotes Collector Side

1NTop View Bar Denotes Base and Emitter Side

1N = Product Type Marking Code

MMBT3904LP

http://oneic.com/

Document number: DS31835 Rev. 4 - 2

1 of 5

www.diodes.com

October 2011

© Diodes Incorporated

MMBT3904LPMaximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit 60 V Collector-Base Voltage VCBO

40 V Collector-Emitter Voltage VCEO

6.0 V Emitter-Base Voltage VEBO

200 mA Collector Current - Continuous (Note 4) IC

Thermal Characteristics

Characteristic Symbol Value Unit 250 mW Power Dissipation (Note 4) PD

Thermal Resistance, Junction to Ambient (Note 4) 500 °C/W RθJA

-55 to +150 Operating and Storage and Temperature Range °C TJ, TSTG

Notes:

4. Device mounted on FR-4 PCB pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com

1r(t), TRANSIENT THERMAL RESISTANCED = 0.9D = 0.7D = 0.50.1D = 0.3D = 0.1D = 0.05RθJA(t) = r(t) * RθJARθJA = 500°C/WP(pk)0.01D = 0.02D = 0.01D = 0.005D = Single Pulset1t2TJ - TA = P * RθJA(t)Duty Cycle, D = t1/t20.0011E-060.000010.00010.0010.010.1110t1, PULSE DURATION TIME (s)Fig. 1 Transient Thermal Response0.41001,00010,0001,000P(pk), PEAK TRANSIENT POWER (W)Single Pulse100RθJA(t) = r(t) * RθJARθJA = 500°C/WTJ - TA = P * RθJA(t)PD, POWER DISSIPATION (W)0.3Note 4100.210.10.11E-060.00010.01110010,000t1, PULSE DURATION TIME (s)Fig. 2 Single Pulse Maximum Power Dissipation0020406080100120140160TA, AMBIENT TEMPERATURE (°C)Fig. 3 Power Dissipation vs. Ambient Temperature

MMBT3904LP

http://oneic.com/

Document number: DS31835 Rev. 4 - 2

2 of 5

www.diodes.com

October 2011

© Diodes Incorporated

MMBT3904LPElectrical Characteristics @TA = 25°C unless otherwise specified

Characteristic SymbolOFF CHARACTERISTICS

Collector-Base Breakdown Voltage BVCBO Collector-Emitter Breakdown Voltage (Note 5) BVCEO Emitter-Base Breakdown Voltage BVEBO Collector Cutoff Current ICEX Base Cutoff Current IBL ON CHARACTERISTICS (Note 5)

60 40 6.0 ⎯ ⎯ 40 70 100 60 30 ⎯ 0.65 ⎯

V ⎯ IC = 10μA, IE = 0 V ⎯ IC = 1.0mA, IB = 0 V ⎯ IE = 10μA, IC = 0

50 nA VCE = 30V, VEB(OFF) = 3.0V 50 nA VCE = 30V, VEB(OFF) = 3.0V ⎯ ⎯ 300 ⎯ ⎯ 0.20 0.30 0.85 0.95

IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA

Min Max Unit Test Condition DC Current Gain hFE

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance

Voltage Feedback Ratio Small Signal Current Gain Output Admittance

Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time

Notes:

5. Short duration pulse test used to minimize self-heating effect.

VCE(sat) VBE(sat) Cobo Cibo hie hre hfe hoe fT td tr ts tf

V V

4.0 pF ⎯ VCB = 5.0V, f = 1.0MHz, IE = 0 8.5 pF ⎯ VEB = 0.5V, f = 1.0MHz, IC = 0

1.0 10 kΩ

-40.5 8.0 x 10 VCE = 10V, IC = 1.0mA,

f = 1.0kHz 100 400 ⎯

1.0 40 μS

VCE = 20V, IC = 10mA,

300 MHz ⎯

f = 100MHz ⎯ ⎯ ⎯ ⎯

35 ns VCC = 3.0V, IC = 10mA, 35 ns VBE(off) = - 0.5V, IB1 = 1.0mA 200 ns VCC = 3.0V, IC = 10mA, 50 ns IB1 = IB2 = 1.0mA

0.140.12IC, COLLECTOR CURRENT (A)0.100.080.060.04IB = 0.2mA400350IB = 2mAVCE =1VTA = 150°CTA = 125°CTA = 85°CIB = 1.2mAIB = 0.8mAIB = 0.6mAIB = 0.4mAhFE ,DC CURRENT GAIN IB = 1.6mA30025020015010050TA = 25°CTA = -55°C0.020012345VCE, COLLECTOR-EMITTER VOLTAGE (V)Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage0110100IC, COLLECTOR CURRENT (mA)Fig. 5 Typical DC Current Gain vs. Collector Current

MMBT3904LP

http://oneic.com/

Document number: DS31835 Rev. 4 - 2

3 of 5

www.diodes.com

October 2011

© Diodes Incorporated

IC/IB = 20IC/IB = 10MMBT3904LP1VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)0.1TA = 150°CTA = 125°CTA = 150°CTA = 125°C0.1TA = 85°CTA = -55°CTA = 25°CTA = 85°CTA = 25°CTA = -55°C0.010.1110100IC, COLLECTOR CURRENT (mA)Fig. 6 Typical Collector-Emitter Saturation Voltagevs. Collector CurrentVBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)0.010.1110100IC, COLLECTOR CURRENT (mA)Fig. 7 Typical Collector-Emitter Saturation Voltagevs. Collector CurrentVBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)1.11.00.90.80.70.60.50.40.31TA = 25°CTA = -55°CTA = 125°CTA = 150°CVCE =5V1.11.00.90.80.7TA = 125°CTA = 150°CGain = 100.60.50.40.31TA = 85°CTA = 25°CTA = -55°CTA = 85°C10100IC, COLLECTOR CURRENT (mA)Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current

10100IC, COLLECTOR CURRENT (mA)Fig. 9 Typical Base-Emitter Saturation Voltagevs. Collector Current

Package Outline Dimensions

AA1Db1Eb2eX1-DFN1006-3 DimMin Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯

All Dimensions in mm

L2L3L1MMBT3904LP

http://oneic.com/

Document number: DS31835 Rev. 4 - 2

4 of 5

www.diodes.com

October 2011

© Diodes Incorporated

MMBT3904LPSuggested Pad Layout

CX1XG2YZG1Dimensions

Z G1 G2 X X1 Y C Value (in mm)

1.1 0.3 0.2 0.7 0.25 0.4 0.7

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2011, Diodes Incorporated

www.diodes.com

MMBT3904LP

http://oneic.com/

Document number: DS31835 Rev. 4 - 2

5 of 5

www.diodes.com

October 2011

© Diodes Incorporated

分销商库存信息:

DIODES

MMBT3904LP-7B

因篇幅问题不能全部显示,请点此查看更多更全内容

Copyright © 2019- jqkq.cn 版权所有

违法及侵权请联系:TEL:199 1889 7713 E-MAIL:2724546146@qq.com

本站由北京市万商天勤律师事务所王兴未律师提供法律服务