EEPROM cell with self-aligned tunneling window

专利名称：EEPROM cell with self-aligned tunneling

window

发明人：Xiao Yu Li,Sunil D. Mehta,Christopher O.

Schmidt

申请号：US09169492申请日：19981009公开号：US024003B1公开日：20020723

专利附图：

摘要：An improved EEPROM cell with a self-aligned tunneling window is providedwhich is fabricated by a standard STI process so as to produce a smaller layout size and a

reduced cell height. The EEPROM cell includes a floating gate, a programmable junctionregion, and a tunneling oxide layer separating the programmable junction region and thefloating gate. The length dimension of the floating gate is less than the length dimensionof the tunneling window so that the tunneling window is overlapping the floating gate.The tunneling window is self-aligned by edges forming the length dimension of thefloating gate so as to form a self-aligned tunneling window.

代理人：Davis Chin

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